GE - IS200ACLEH1ACB Application Control Layer Module Analog Input GI/IS IOTA Inrush current: 30 A @

Inrush current: 30 A @ 120 V

Key Functionalities

and vibration amplitude/phase

Max Output Voltage: 20

Inputs: 16 bytes (4 bytes in Fast mode)

GE - IS200ACLEH1ACB Application Control Layer Module Analog Input GI/IS IOTA Inrush current: 30 A @Overview IS200ACLEH1ACB is an Application Control Layer Module developed by GE for industrial control systems. It provides reliable control and data processing, supporting high performance memory and efficient storage handling. Electrical Parameters Input voltage: 24 V DC Memory & Storage Memory support: Up to 64 GB DDR4 Storage: 128 MB Flash (IDE to SATA converter) Physical Dimensions Height: 12. 0 cm Width: 19. 0 cm Depth: 4. 0 cm